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1

Thermal noise in nanometric DG-MOSFET

P. Dollfus, A. Bournel, S. Galdin-Retailleau, J. E. Velázquez

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 339 KB

english, 2006

2

Monte Carlo study of 2D electron gas transport including Pauli exclusion principle in highly doped silicon

F. Carosella, J. Saint-Martin, A. Bournel, S. Galdin-Retailleau, P. Dollfus

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 197 KB

english, 2008

3

Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design

Fregonese, S., Cazin d'Honincthun, H., Goguet, J., Maneux, C., Zimmer, T., Bourgoin, J.-P., Dollfus, P., Galdin-Retailleau, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.05 MB

english, 2008

4

[IEEE Proceedings. 2006 International Conference on Design and Test of Integrated Systems in Nanoscale Technology - Tunis (2006.09.5-2006.09.7)] International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. - Analysis of CNTFET physical compact model

Maneux, C., Goguet, J., Fregonese, S., Zimmer, T., Cazin d'Honincthun, H., Galdin-Retailleau, S.

Year:

2006

Language:

english

File:

PDF, 444 KB

english, 2006

5

[IEEE Electrical Performance of Electronic Packaging - Austin, TX (2004.10.27-2004.10.27)] Electrical Performance of Electronic Packaging IWCE-04 - 3D Monte Carlo analysis of discrete dopant effects on electron noise in Si devices

Dollfus,, Velazquez,, Bourne,, Galdin-Retailleau,

Year:

2004

Language:

english

File:

PDF, 96 KB

english, 2004

6

[IEEE 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Melbourne VIC, Australia (2014.6.1-2014.6.5)] 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Spin-transfer torque magnetic memory as a stochastic memristive synapse

Vincent, A. F., Larroque, J., Zhao, W. S., Romdhane, N. Ben, Bichler, O., Gamrat, C., Klein, J.-O., Galdin-Retailleau, S., Querlioz, D.

Year:

2014

Language:

english

File:

PDF, 866 KB

english, 2014

7

Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

Hugues Cazin d'Honincthun, Sylvie Galdin-Retailleau, Arnaud Bournel, Philippe Dollfus, Jean-Philippe Bourgoin

Journal:

Comptes Rendus Physique

Year:

2008

Language:

english

File:

PDF, 1.28 MB

english, 2008

8

Influence of capacitive effects on the dynamic of a CNTFET by Monte Carlo method

H. Cazin d’Honincthun, H.-Nha Nguyen, S. Galdin-Retailleau, A. Bournel, P. Dollfus, J.P. Bourgoin

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2008

Language:

english

File:

PDF, 262 KB

english, 2008

9

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

V. Aubry-Fortuna, P. Dollfus, S. Galdin-Retailleau

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 513 KB

english, 2005

10

Full band Monte Carlo study of ballistic effects in nanometer-scaled strained P channel Double Gate MOSFETs

K. Huet, C. Chassat, D.-P. Nguyen, S. Galdin-Retailleau, A. Bournel, P. Dollfus

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 578 KB

english, 2008

11

3D Monte Carlo Analysis of Discrete Dopant Effects on Electron noise in Si Devices

P. Dollfus, J. E. VeláZquez, A. Bournel, S. Galdin-Retailleau

Journal:

Journal of Computational Electronics

Year:

2004

Language:

english

File:

PDF, 741 KB

english, 2004

12

Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

Damien Querlioz, Huu-Nha Nguyen, Jérôme Saint-Martin, Arnaud Bournel, Sylvie Galdin-Retailleau, Philippe Dollfus

Journal:

Journal of Computational Electronics

Year:

2009

Language:

english

File:

PDF, 1.60 MB

english, 2009

13

Multiscale simulation of carbon nanotube devices

C. Adessi, R. Avriller, X. Blase, A. Bournel, H. Cazin d'Honincthun, P. Dollfus, S. Frégonèse, S. Galdin-Retailleau, A. López-Bezanilla, C. Maneux, H. Nha Nguyen, D. Querlioz, S. Roche, F. Triozon, T.

Journal:

Comptes Rendus Physique

Year:

2009

File:

PDF, 1.32 MB

2009

14

Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots

J. Sée, P. Dollfus, S. Galdin-Retailleau, P. Hesto

Journal:

Journal of Computational Electronics

Year:

2003

Language:

english

File:

PDF, 183 KB

english, 2003

15

Study of phonon modes in silicon nanocrystals using the adiabatic bond charge model

Valentin, Audrey, Sée, Johann, Galdin-Retailleau, Sylvie, Dollfus, Philippe

Journal:

Journal of Physics Condensed Matter

Year:

2008

Language:

english

File:

PDF, 842 KB

english, 2008

16

On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

Querlioz, D., Saint-Martin, J., Huet, K., Bournel, A., Aubry-Fortuna, V., Chassat, C., Galdin-Retailleau, S., Dollfus, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 889 KB

english, 2007

17

Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

Huu-Nha Nguyen, Querlioz, D., Galdin-Retailleau, S., Dollfus, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 644 KB

english, 2011

18

Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors

Talbo, V., Galdin-Retailleau, S., Valentin, A., Dollfus, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.26 MB

english, 2011

19

Phonon effect on single-electron transport in two-dot semiconductor devices

Valentin, Audrey, Galdin-Retailleau, Sylvie, Dollfus, Philippe

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 785 KB

english, 2009

20

[IEEE 2010 International Workshop on Computational Electronics (IWCE) - Pisa, Italy (2010.10.26-2010.10.29)] 2010 14th International Workshop on Computational Electronics - Fully self-consistent simulation of silicon nanocrystal-based single-electron transistors

Talbo, Vincent, Valentin, Audrey, Galdin-Retailleau, Sylvie, Dollfus, Philippe

Year:

2010

Language:

english

File:

PDF, 878 KB

english, 2010

21

[IEEE 13th International Workshop on Computational Electronics (IWCE) - Beijing, China (2009.05.27-2009.05.29)] 2009 13th International Workshop on Computational Electronics - Wigner Monte Carlo Simulation of CNTFET: Comparison Between Semi-Classical and Quantum Transport

Nguyen, Huu-Nha, Querlioz, Damien, Galdin-Retailleau, Sylvie, Bournel, Arnaud, Dollfus, Philippe

Year:

2009

Language:

english

File:

PDF, 360 KB

english, 2009

22

[IEEE 2008 9th International Conference on Ultimate Integration on Silicon (ULIS) - Udine, Italy (2008.03.12-2008.03.14)] 2008 9th International Conference on Ultimate Integration of Silicon - Electron/phonon interaction in silicon quantum dots

Valentin, A., See, J., Galdin-Retailleau, S., Dollfus, P.

Year:

2008

Language:

english

File:

PDF, 96 KB

english, 2008

23

[IEEE 13th International Workshop on Computational Electronics (IWCE) - Beijing, China (2009.05.27-2009.05.29)] 2009 13th International Workshop on Computational Electronics - Sequential Transport in a Two-Dot Device

Valentin, A., Galdin-Retailleau, S., Dollfus, P.

Year:

2009

Language:

english

File:

PDF, 378 KB

english, 2009

24

[IEEE 2012 15th International Workshop on Computational Electronics (IWCE) - Madison, WI, USA (2012.05.22-2012.05.25)] 2012 15th International Workshop on Computational Electronics - Shot noise behavior in single-electron quantum dot-based structures

Talbo, V., Galdin-Retailleau, S., Querlioz, D., Dollfus, P.

Year:

2012

Language:

english

File:

PDF, 247 KB

english, 2012

25

Electron-phonon scattering and ballistic behavior in semiconducting carbon nanotubes

d’Honincthun, H. Cazin, Galdin-Retailleau, S., Sée, J., Dollfus, P.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 322 KB

english, 2005

26

[IEEE ESSDERC 2007 - 37th European Solid State Device Research Conference - Muenchen, Germany (2007.09.11-2007.09.13)] ESSDERC 2007 - 37th European Solid State Device Research Conference - Monte Carlo study of apparent mobility reduction in nano-MOSFETs

Huet, K., Saint-Martin, J., Bournel, A., Galdin-Retailleau, S., Dollfus, P., Ghibaudo, G., Mouis, M.

Year:

2007

Language:

english

File:

PDF, 293 KB

english, 2007

27

Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems

Vincent, Adrien F., Larroque, Jerome, Locatelli, Nicolas, Ben Romdhane, Nesrine, Bichler, Olivier, Gamrat, Christian, Zhao, Wei Sheng, Klein, Jacques-Olivier, Galdin-Retailleau, Sylvie, Querlioz, Dami

Journal:

IEEE Transactions on Biomedical Circuits and Systems

Year:

2015

Language:

english

File:

PDF, 986 KB

english, 2015

28

Analytical Macrospin Modeling of the Stochastic Switching Time of Spin-Transfer Torque Devices

Vincent, Adrien F., Locatelli, Nicolas, Klein, Jacques-Olivier, Zhao, Weisheng S., Galdin-Retailleau, Sylvie, Querlioz, Damien

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.78 MB

english, 2015

29

[IEEE 32nd European Solid-State Device Research Conference - Firenze, Italy (2002.9.24-2002.9.26)] 32nd European Solid-State Device Research Conference - Effects of Random Discrete Impurities in Ultra-short MOSFET Using 3D Monte Carlo Simulation

Barraud, S., Dollfus, P., Galdin-Retailleau, S., Hesto, P.

Year:

2002

Language:

english

File:

PDF, 147 KB

english, 2002

30

[IEEE INTERMAG 2015 - IEEE International Magnetics Conference - Beijing, China (2015.5.11-2015.5.15)] 2015 IEEE Magnetics Conference (INTERMAG) - Stochastic Memristive Synapses from Spin-Transfer Torque Magnetic Tunnel Junctions

Vincent, A. F., Locatelli, N., Larroque, J., Zhao, W., Klein, J., Galdin-Retailleau, S., Querlioz, D.

Year:

2015

Language:

english

File:

PDF, 498 KB

english, 2015

31

[IEEE 2014 International Workshop on Computational Electronics (IWCE) - Paris, France (2014.6.3-2014.6.6)] 2014 International Workshop on Computational Electronics (IWCE) - Monte-Carlo Simulations of Magnetic Tunnel Junctions: From physics to application

Vincent, A. F., Zhao, W.S., Klein, J.-O., Galdin-Retailleau, S., Querlioz, D.

Year:

2014

Language:

english

File:

PDF, 453 KB

english, 2014

32

Ultra-short n-MOSFETs with strained Si: device performance and the effect of ballistic transport using Monte Carlo simulation

Aubry-Fortuna, Valérie, Bournel, Arnaud, Dollfus, Philippe, Galdin-Retailleau, Sylvie

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 242 KB

english, 2006

33

Influence of discrete impurity position in the channel of an ultra-small MOSFET

Dollfus, Philippe, Galdin-Retailleau, Sylvie, Bournel, Arnaud, Monsef, Florian, Barraud, Sylvain, Hesto, Patrice

Journal:

Semiconductor Science and Technology

Year:

2004

Language:

english

File:

PDF, 97 KB

english, 2004

34

[IEEE 2015 International Conference on Memristive Systems (MEMRISYS) - Paphos, Cyprus (2015.11.8-2015.11.10)] 2015 International Conference on Memristive Systems (MEMRISYS) - Approximate programming of magnetic memory elements for energy saving

Locatelli, N., Vincent, A.F., Galdin-Retailleau, S., Klein, J-o., Querlioz, D.

Year:

2015

Language:

english

File:

PDF, 431 KB

english, 2015

35

Phonon dispersion in silicon nanocrystals

Valentin, A, Sée, J, Galdin-Retailleau, S, Dollfus, P

Journal:

Journal of Physics Conference Series

Year:

2007

Language:

english

File:

PDF, 675 KB

english, 2007